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Properties of Semiconductors at 300K
Bandgap (eV) Mobility (cm^2/V-s) Effective mass m*/m0 Band Lattice constant (A)
electron hole electron hole
Element C 5.47 1800 1200 0.2 0.25 Indirect 3.56683
Ge 0.66 3900 1900 1.64 0.04 Indirect 5.64613
Si 1.12 1500 450 0.98 0.16 Indirect 5.43095
Sn 1400 1200 Direct 6.48920
IV-IV SiC 2.966 400 50 0.6 1 Indirect a=3.086,c=15.117
III-V AlSb 1.58 200 420 0.12 0.98 Indirect 6.1355
BN 7.5 Indirect 3.615
BP 2 4.538
GaN 3.36 380 0.19 0.6 a=3.189,c=5.185
GaSb 0.72 5000 850 0.042 0.4 Direct 6.0959
GaAs 1.42 8500 400 0.067 0.082 Direct 5.6533
GaP 2.26 110 75 0.82 0.60 Indirect 5.4512
InSb 0.17 80000 1250 0.0145 0.40 Direct 6.4794
InAs 0.36 33000 460 0.023 0.4 Direct 6.0584
InP 1.35 4600 150 0.077 0.64 Direct 5.8686
II-VI CdS 2.42 340 50 0.21 0.80 Direct 5.832
CdSe 1.70 800 0.13 0.45 Direct 6.050
CdTe 1.56 1050 100 Direct 6.482
ZnO 3.35 200 180 0.27 Direct 4.580
ZnS 3.68 165 5 0.4 Direct 5.420
IV-VI PbS 0.41 600 700 0.25 0.25 Indirect 5.9362
PbTe 0.31 6000 4000 0.17 0.20 Indirect 6.4620
References: Physics of semicondcutor Devices, S.M. Sze, 2nd Edition;

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